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PTF 10162 18 Watts, 860-960 MHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10162 is an 18 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. It operates at 55% efficiency with 15 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * Performance at 960 MHz, 26 Volts - Output Power = 18 Watts - Power Gain = 15 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% Lot Traceability
* * * * *
Typical Output Power & Efficiency vs. Input Power
24 80 70 Efficiency 60 50 20 Output Power 16 12 8 4 0 0.0 0.3 0.5 0.8 1.0
Output Power (Watts)
Efficiency (%)
A -1 2
1016 3456 2 985
5
VDD = 26 V IDQ = 130 mA f = 960 MHz
40 30 20
Input Power (Watts)
Package 20222
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 130 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz-- all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated.
Symbol
Gps P-1dB h Y
Min
14 18 50 --
Typ
15 20 55 --
Max
-- -- -- 5:1
Units
dB Watts % --
e
1
PTF 10162
Electrical Characteristics (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
e
Conditions
VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 0.5 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- 3.0 --
Typ
-- -- -- 0.9
Max
-- 1.0 5.0 --
Units
Volts mA Volts Siemens
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Thermal Resistance (TCASE = 70C) TSTG RqJC
Symbol
VDSS VGS TJ PD
Value
65 20 200 58 0.33 150 3.0
Unit
Vdc Vdc C Watts W/C C C/W
Typical Performance
Typical POUT , Gain & Efficiency (at P-1dB) vs. Frequency
21 Output Power 20 19 18 17 Gain 16 15 860 880 900 920 940 65 70
Broadband Test Fixture Performance
20 Efficiency (%) 16 60 50 40
Gain (dB) & Output Power (W)
60 55 Efficiency 50 45 40 35 960
Efficiency (%)
Gain
Gain (dB) 12
VDD = 26 V IDQ = 130 mA POUT = 18 W
30 0 - 20 5 -10 -15 10 -20 -25 0 960
VDD = 26 V IDQ = 130 mA
8 Return Loss (dB) 4 920 930 940 950
Frequency (MHz)
Frequency (MHz)
2
Return Loss
Efficiency
e
Power Gain vs. Output Power
16
24
PTF 10162
Output Power (at 1 dB Compression) vs. Supply Voltage
Output Power (Watts)
IDQ = 130 mA
Power Gain (dB)
15 IDQ = 65 mA IDQ = 35 mA 13
22 20 18 16 14
14
VDD = 26 V f = 960 MHz
IDQ = 130 mA f = 960 MHz
12 0.1 1.0 10.0 100.0
22
24
26
28
30
32
34
Output Power (Watts)
Supply Voltage (Volts)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
0 -10 50
Capacitance vs. Supply Voltage
6 5
Cds and Cgs (pF)
VDD = 26 V IDQ = 130 mA
3rd Order
40 30 20 10 0
Cgs
VGS = 0 V f = 1 MHz
3 2 1
IMD (dBc)
-20 -30 -40 -50 -60 0
f1 = 959.900 MHz f2 =960.000 MHz
5th
Cds Crss
0 10 20 30 40
7th
0
5
10
15
20
25
Output Power (Watts-PEP)
Supply Voltage (Volts)
Bias Voltage vs. Temperature
1.03 1.02
Voltage normalized to 1.0 V Series show current (A)
Bias Voltage (V)
1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0 20 40 60 80 100 0.075 0.585 1.095 0.33 0.84 1.35
Temp. (C)
3
Crss (pF)
4
PTF 10162
Impedance Data
--->
RA T
OR
e
Z0 = 50 W
D
0 .1
G S
T OW A
RD G
EN E
Z Source
Z Load
Frequency
MHz 860 880 900 920 960 R
Z Source W
jX 2.7 2.6 2.4 2.3 2.1 R 5.8 5.5 5.0 4.8 4.7 2.0 2.0 2.0 1.9 1.9
Z Load W
jX 4.4 4.6 5.0 5.1 5.3
TO W AR D LOAD
Z Source
0.0
0.1
G TH S
0.1
4
AV
ELE N
0.2
0. 2
VDD = 26 V, POUT = 18 W, IDQ = 130 mA
Z Load
960 MHz 860 MHz 860 MHz 960 MHz
e
Typical Scattering Parameters
(VDS = 26 V, ID = 500 mA)
PTF 10162
f (MHz)
100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200
S11 Mag
0.828 0.821 0.817 0.825 0.836 0.847 0.859 0.870 0.883 0.892 0.902 0.909 0.919 0.922 0.930 0.934 0.941 0.943 0.944 0.946 0.950 0.950 0.952 0.952 0.952 0.953 0.956 0.954 0.952 0.952 0.949 0.948 0.947 0.946 0.945 0.943 0.942 0.945 0.947 0.949 0.951 0.952 0.956
S21 Ang
-120 -138 -148 -155 -160 -164 -167 -170 -172 -174 -176 -179 180 178 176 174 173 171 170 169 167 166 164 163 162 160 159 157 156 154 153 151 150 148 147 145 143 142 140 139 137 136 134
S12 Ang
103 87.8 77.5 69.6 62.7 56.4 51.3 45.6 42.2 36.9 33.3 29.6 26.7 23.6 21.1 17.5 16.3 12.5 10.8 8.51 5.94 3.97 4.03 0.16 -0.92 -1.19 -5.01 -5.67 -6.40 -6.60 -7.30 -7.58 -7.59 -7.59 -7.60 -7.64 -6.40 -6.23 -6.20 -5.74 -5.20 -4.36 -4.30
S22 Ang
20.6 10.7 6.0 6.5 9.7 20.7 41.5 64.2 83.2 92.6 97.9 98.5 98.6 98.7 99.3 98.6 98.3 95.8 95.4 92.5 91.7 91.4 90.5 87.1 87.6 86.6 84.9 84.9 84.2 83.9 83.7 83.1 82.2 81.6 81.4 80.9 79.8 79.6 79.5 80.1 79.4 79.0 76.1
Mag
27.9 19.2 14.1 10.8 8.75 7.09 5.96 5.02 4.31 3.71 3.20 2.81 2.48 2.19 1.97 1.77 1.61 1.47 1.31 1.21 1.12 1.02 0.952 0.902 0.805 0.781 0.732 0.688 0.660 0.619 0.573 0.591 0.523 0.492 0.498 0.453 0.442 0.433 0.406 0.401 0.392 0.376 0.357
Mag
0.015 0.014 0.013 0.011 0.009 0.007 0.006 0.007 0.008 0.011 0.014 0.016 0.020 0.022 0.025 0.028 0.032 0.035 0.039 0.043 0.046 0.049 0.053 0.057 0.060 0.065 0.068 0.072 0.078 0.084 0.085 0.097 0.096 0.106 0.113 0.119 0.124 0.134 0.135 0.150 0.154 0.171 0.171
Mag
0.597 0.576 0.571 0.602 0.628 0.661 0.698 0.723 0.754 0.783 0.805 0.831 0.845 0.860 0.880 0.890 0.904 0.916 0.922 0.930 0.937 0.945 0.945 0.955 0.951 0.958 0.955 0.963 0.953 0.967 0.950 0.959 0.950 0.949 0.953 0.952 0.947 0.957 0.953 0.946 0.955 0.950 0.949
Ang
-65.9 -79.6 -91.7 -102 -110 -118 -124 -130 -135 -140 -144 -149 -152 -155 -158 -161 -164 -166 -168 -171 -172 -174 -176 -178 -180 178 177 175 173 172 170 169 167 166 163 163 160 159 157 156 153 153 150
5
PTF 10162
Test Circuit
e
Test Circuit Schematic for f = 960 MHz
DUT
l1 l2 l3, l4 l5 l6
C1, C2, C5, C8 C3 C4 C6 C7 C9 L1 R1, R2, R3 Circuit Board
PTF 10162 Microstrip 50 W (0.098 l, 960 MHz) Microstrip 8.4 W (0.025 l, 960 MHz) Microstrip 8.4 W (0.084 l, 960 MHz) Microstrip 13.9 W (0.256 l, 960 MHz) Microstrip 50 W (0.040 l, 960 MHz) Capacitor, 36 pF ATC 100 B Capacitor, 3.0 pF ATC 100 B Capacitor, 3.6 pF ATC 100 B Capacitor, 0.1 F, 50 V Digi-Key P4525-ND Capacitor, 100 F, 50 V Digi-Key P5182-ND Capacitor, 0.7pF ATC 100 B 4 Turns, 20 AWG, .120 I.D. N/A Resistor, 220 W Digi-Key 2.2 QBK .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper
Placement Diagram (not to scale)
6
e
Test Circuit
(Check our Web site at www.ericsson.com/rfpower for Gerber files for this circuit.)
PTF 10162
Artwork (1 inch
).
Package Mechanical Specifications Package 20222
Unless otherwise specified all tolerances 0.005"
Pin Configuration: 1.Drain 2.Source 3.Gate Lead Thickness: 0.005 +0.001/-0.002"
Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L3 (c) 1999 Ericsson Inc. EUS/KR 1301-PTF 10162 Uen Rev. A 12-06-99
7
e
Notes:
8

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